2SK3473

2003-07-16

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

2SK3473

Switching Regulator Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

900

V

900

V

Gate-source voltage

±30

V

DC

(Note 1)

9

Drain current

Pulse (t

= 1 ms)

(Note 1)

27

A

Drain power dissipation (Tc

= 25°C)

150

W

Single pulse avalanche energy

(Note 2)

413

mJ

Avalanche current

9

A

Repetitive avalanche energy (Note 3)

15

mJ

Channel temperature

150

°C

Storage temperature range

-55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C/W

Thermal resistance, channel to ambient

50

°C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-65

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)