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KM641001A-20 Scheda tecnica(PDF) 1 Page - Samsung semiconductor

Il numero della parte KM641001A-20
Spiegazioni elettronici  256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range
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Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM641001A-20 Scheda tecnica(HTML) 1 Page - Samsung semiconductor

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KM641001A
CMOS SRAM
PRELIMINARY
Rev 5.0
- 1 -
February 1998
Document Title
256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out.
Operated at Commercial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
Remark
Design Target
Preliminary
Final
Final
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary
Release to final Data Sheet.
2.1. Delete Preliminary
Update D.C and A.C parameters.
3.1. Update D.C parameters
3.2. Update A.C parameters
Update D.C and A.C parameters
4.1. Update D.C and A.C parameters.
4.2. Add the test condition for VOH1 with VCC=5V
±5% at 25°C
4.3. Add timing diagram to define tWP as
″(Timing Wave Form of
Write Cycle(CS=Controlled)
5.1. Delete 17ns Part
Items
Previous spec.
(15/17/20ns part)
Updated spec.
(15/17/20ns part)
Icc
190/180/170mA
145/145/140mA
Isb
30mA
25mA
Isb1
10mA
8mA
Items
Previous spec.
(15/17/20ns part)
Updated spec.
(15/17/20ns part)
tCW
12/12/13ns
10/11/12ns
tAW
12/12/13ns
10/11/12ns
tWP1(OE=H)
12/12/13ns
10/11/12ns
tDW
8/9/10ns
7/8/9ns
Items
Previous spec.
(15/17/20ns part)
Updated spec.
(15/17/20ns part)
Icc
145/145/140mA
125/125/120mA
tOW
3/4/5ns
3/3/3ns
Draft Data
Jan. 18th, 1995
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998


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