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SI4914DY Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI4914DY Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si4914DY New Product Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • LITTLE FOOT® Plus Integrated Schottky • 100 % Rg Tested APPLICATIONS • Logic DC/DC - Notebook PC PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) Channel-1 30 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V 5.6 Channel-2 0.020 at VGS = 10 V 7.4 0.027 at VGS = 4.5 V 6.4 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.40 V at 1.0 A 2.0 D1 G1 D1 S1/D2 G2 S1/D2 S2 S1/D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free) G2 S2 N-Channel 2 MOSFET Schottky Diode G1 D1 N-Channel 1 MOSFET S1/D2 Notes: a. Surface Mounted on 1" x 1" FR4 Board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit 10 sec Steady State 10 sec Steady State Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 7.0 5.5 7.4 5.7 A TA = 70 °C 5.6 4.364.5 Pulsed Drain Current IDM 40 40 Continuous Source Current (Diode Conduction)a IS 1.7 1.0 1.8 0.95 Single Pulse Avalanche Current L = 0.1 mH IAS 13 15 Avalanche Energy EAS 8.45 11 mJ Maximum Power Dissipationa TA = 25 °C PD 1.9 1.1 2.0 1.16 W TA = 70 °C 1.2 0.71 1.3 0.74 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ Max Typ Max Maximum Junction-to-Ambienta t ≤ 10 sec RthJA 52 65 47 60 °C/W Steady State 90 112 85 107 Maximum Junction-to-Foot (Drain) Steady State RthJF 30 38 28 35 RoHS COMPLIANT |
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