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BTA140B-800 Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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BTA140B-800 Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Triacs BTA140B series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BTA140B- 500 600 800 applications requiring high V DRM Repetitive peak off-state 500 600 800 V bidirectional transient and blocking voltages voltage capability and high thermal I T(RMS) RMS on-state current 25 25 25 A cycling performance. Typical I TSM Non-repetitive peak on-state 190 190 190 A applications include motor control, current industrial and domestic lighting, heating and static switching. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate mb main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; T mb ≤ 91 ˚C - 25 A I TSM Non-repetitive peak full sine wave; T j = 25 ˚C prior to on-state current surge t = 20 ms - 190 A t = 16.7 ms - 209 A I 2tI2t for fusing t = 10 ms - 180 A 2s dI T/dt Repetitive rate of rise of I TM = 30 A; IG = 0.2 A; on-state current after dI G/dt = 0.2 A/µs triggering T2+ G+ - 50 A/ µs T2+ G- - 50 A/ µs T2- G- - 50 A/ µs T2- G+ - 10 A/ µs I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms period - 0.5 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature 13 mb 2 T1 T2 G 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. September 1997 1 Rev 1.100 |
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