2SK2275

2

Test Circuit 1: Avalanche Capability

Test Circuit 2: Switching Time

Test Circuit 3: Gate Charge

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Drain to Source On-state Resistance

2.2

2.8

Ω

Gate to Source Cutoff Voltage

2.5

3.5

V

Forward Transfer Admittance

1.0

S

Drain Leakage Current

100

µA

Gate to Source Leakage Current

±10

µA

Input Capacitance

1 000

pF

Output Capacitance

170

pF

Reverse Transfer Capacitance

60

pF

f = 1 MHz

Turn-On Delay Time

20

ns

Rise Time

20

ns

Turn-Off Delay Time

90

ns

Ω

Fall Time

20

ns

Ω

Total Gate Charge

42

nC

Gate to Source Charge

6.0

nC

Gate to Drain Charge

20

nC

Diode Forward Voltage

0.9

V

Reverse Recovery Time

480

ns

Reverse Recovery Charge

2.5

µC

di/dt = 50 A/

µs

→ 0 V

PG.

Ω

50

Ω

D.U.T.

L

PG.

Ω

D.U.T.

PG.

50

Ω

D.U.T.

0

τ = 1 s

Duty Cycle

≤ 1%

Wave

Form

Wave

Form

10 %

10 %

0

0

90 %

90 %

90 %

10 %

τ

µ

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.