STB200NF04L-1 datasheet(3/12 Pages) STMICROELECTRONICS

Il numero della parte	STB200NF04L-1

Spiegazioni elettronici	N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET

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STP200NF04L - STB200NF04L - STB200NF04L-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

Table 7: Source Drain Diode

(1) Pulse width limited by safe operating area

(4). Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (4)

Forward Transconductance

VDS = 15 V, ID = 20 A

60

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

6400

1300

190

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 20 V, ID = 50 A,

RG= 4.7 Ω VGS = 4.5 V

(see Figure 16)

37

270

90

80

ns

tf(Voff)

tf

tc

Turn-off Delay Time

Fall Time

Cross-over Time

Vclamp = 32 V, ID = 100 A,

RG= 4.7 Ω VGS = 4.5 V

(see Figure 17)

85

125

160

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 32 V, ID = 100 A,

VGS = 4.5 V

(see Figure 19)

72

20

28.5

90

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

100

A

ISDM (1)

Source-drain Current (pulsed)

400

A

VSD (4)

Forward On Voltage

ISD = 160 A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 100 A, di/dt = 100 A/µs,

VDD = 20 V, Tj = 150°C

(see Figure 16)

88

240

5.5

ns

nC

A

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