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MA26V14 Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor |
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MA26V14 Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Publication date: April 2002 SKD00082AED Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type For VCO s Features • Good linearity and large capacitance-ratio in C D − VR relation • Small series resistance r D • High frequency type by this low capacitance s Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 6V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Marking Symbol: 3H Unit: mm 1: Anode 2: N.C. 3: Cathode ML3-N2 Package 1.00±0.05 2 1 3 0.39 +0.01 −0.03 0.25±0.05 0.25±0.05 0.65±0.01 2 1 0.05±0.03 3 s Electrical Characteristics T a = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 5 V 10 nA Diode capacitance CD(1V) VR = 1 V, f = 1 MHz 4.99 5.41 pF CD(4V) VR = 4 V, f = 1 MHz 2.33 2.53 Capacitance ratio CD(1V)/CD(4V) 2.05 2.23 Series resistance * rD VR = 4 V, f = 470 MHz 0.40 Ω Note) 1. Rated input/output frequency: 470 MHz 2. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER |
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