FP15R12KE3G datasheet(2/11 Pages) EUPEC

Il numero della parte	FP15R12KE3G

Spiegazioni elettronici	IGBT-Module

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Produttore elettronici	EUPEC [eupec GmbH]

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FP15R12KE3G

Vorläufige Daten

Preliminary data

Modul Isolation/ Module Isolation

Isolations-Prüfspannung

insulation test voltage

RMS, f = 50 Hz, t = 1 min.

NTC connected to Baseplate

VISOL

2,5

kV

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Diode Gleichrichter/ Diode Rectifier

min.

typ.

max.

Durchlaßspannung

forward voltage

Tvj = 150°C,

IF = 15 A

VF

-

0,95

-

V

Schleusenspannung

threshold voltage

Tvj = 150°C

V(TO)

-

0,8

V

Ersatzwiderstand

slope resistance

Tvj = 150°C

rT

-

10,5

m

Ω

Sperrstrom

reverse current

Tvj = 150°C,

VR = 1600 V

IR

-

2

-

mA

Modul Leitungswiderstand, Anschlüsse-Chip

lead resistance, terminals-chip

TC = 25°C

RAA'+CC'

-

5

-

m

Ω

Transistor Wechselrichter/ Transistor Inverter

min.

typ.

max.

Kollektor-Emitter Sättigungsspannung

VGE = 15V, Tvj = 25°C,

IC =

15 A

VCE sat

-

1,7

2,2

V

collector-emitter saturation voltage

VGE = 15V, Tvj = 125°C,

IC =

15 A

-

2

-

V

Gate-Schwellenspannung

gate threshold voltage

VCE = VGE,

Tvj = 25°C,

IC =

0,5 mA

VGE(TO)

5,0

5,8

6,5

V

Eingangskapazität

input capacitance

f = 1MHz, Tvj = 25°C

VCE = 25 V, VGE = 0 V

Cies

-

1,1

-

nF

Kollektor-Emitter Reststrom

collector-emitter cut off current

VGE = 0V,

Tvj = 25°C, VCE =

1200 V

ICES

-

5

mA

Gate-Emitter Reststrom

gate-emitter leakage current

VCE = 0V, VGE =20V, Tvj =25°C

IGES

-

400

nA

Einschaltverzögerungszeit (ind. Last)

IC = INenn,

VCC =

600 V

turn on delay time (inductive load)

VGE = ±15V, Tvj = 25°C, RG =

75 Ohm

td,on

-

85

-

ns

VGE = ±15V, Tvj = 125°C, RG =

75 Ohm

-

90

-

ns

Anstiegszeit (induktive Last)

IC = INenn,

VCC =

600 V

rise time (inductive load)

VGE = ±15V, Tvj = 25°C, RG =

75 Ohm

tr

-

30

-

ns

VGE = ±15V, Tvj = 125°C, RG =

75 Ohm

-

45

-

ns

Abschaltverzögerungszeit (ind. Last)

IC = INenn,

VCC =

600 V

turn off delay time (inductive load)

VGE = ±15V, Tvj = 25°C, RG =

75 Ohm

td,off

-

420

-

ns

VGE = ±15V, Tvj = 125°C, RG =

75 Ohm

-

520

-

ns

Fallzeit (induktive Last)

IC = INenn,

VCC =

600 V

fall time (inductive load)

VGE = ±15V, Tvj = 25°C, RG =

75 Ohm

tf

-

65

-

ns

VGE = ±15V, Tvj = 125°C, RG =

75 Ohm

-

90

-

ns

Einschaltverlustenergie pro Puls

IC = INenn,

VCC =

600 V

turn-on energy loss per pulse

VGE = ±15V, Tvj = 125°C, RG =

75 Ohm

Eon

-

2,1

-

mWs

LS =

45 nH

Abschaltverlustenergie pro Puls

IC = INenn,

VCC =

600 V

turn-off energy loss per pulse

VGE = ±15V, Tvj = 125°C, RG =

75 Ohm

Eoff

-

1,5

-

mWs

LS =

45 nH

Kurzschlußverhalten

tP ≤10µs, VGE ≤15V,

RG =

75 Ohm

SC Data

Tvj≤125°C,

VCC =

720 V

ISC

-

60

-

A

2(11)

DB-PIM-IGBT3_1.xls

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