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SI3812DV Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI3812DV Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si3812DV Vishay Siliconix Document Number: 71069 S-03510—Rev. D, 16-Apr-01 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.1 0.2 0.3 0.4 0.5 012 34 567 0 2 4 6 8 10 0 1234 5 0.0 0.9 1.8 2.7 3.6 4.5 0.0 0.5 1.0 1.5 2.0 2.5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 04 8 12 16 20 VGS = 4.5 thru 3.5 V 25 _C TC = –55_C Crss Coss Ciss VDS = 10 V ID = 2.4 A VGS = 4.5 V ID = 2.4 A VGS = 4.5 V VGS = 2.5 V 1.5 V 125 _C Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) 2.5 V 3 V 2 V |
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