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SI3812DV Scheda tecnica(PDF) 3 Page - Vishay Siliconix

Il numero della parte SI3812DV
Spiegazioni elettronici  N-Channel 20-V (D-S) MOSFET With Schottky Diode
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Si3812DV
Vishay Siliconix
Document Number: 71069
S-03510—Rev. D, 16-Apr-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.1
0.2
0.3
0.4
0.5
012
34
567
0
2
4
6
8
10
0
1234
5
0.0
0.9
1.8
2.7
3.6
4.5
0.0
0.5
1.0
1.5
2.0
2.5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50
–25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
04
8
12
16
20
VGS = 4.5 thru 3.5 V
25
_C
TC = –55_C
Crss
Coss
Ciss
VDS = 10 V
ID = 2.4 A
VGS = 4.5 V
ID = 2.4 A
VGS = 4.5 V
VGS = 2.5 V
1.5 V
125
_C
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (_C)
2.5 V
3 V
2 V


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