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74AUP1G0832 Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte 74AUP1G0832
Spiegazioni elettronici  Low-power 3-input AND-OR gate
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUP1G0832 Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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74AUP1G0832_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01.00 — 26 January 2006
2 of 19
Philips Semiconductors
74AUP1G0832
Low-power 3-input AND-OR gate
3.
Quick reference data
[1]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
[2]
The condition is VI = GND to VCC.
4.
Ordering information
Table 1:
Quick reference data
GND = 0 V; Tamb =25 °C; tr =tf ≤ 3ns.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tPHL, tPLH HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A, BorCtoY
CL = 5 pF; RL =1MΩ;
VCC = 0.8 V
-
19.5
-
ns
CL = 5 pF; RL =1MΩ;
VCC = 1.1 V to 1.3 V
2.5
5.6
11.1
ns
CL = 5 pF; RL =1MΩ;
VCC = 1.4 V to 1.6 V
1.9
3.9
6.4
ns
CL = 5 pF; RL =1MΩ;
VCC = 1.65 V to 1.95 V
1.6
3.1
5.1
ns
CL = 5 pF; RL =1MΩ;
VCC = 2.3 V to 2.7 V
1.4
2.4
3.7
ns
CL = 5 pF; RL =1MΩ;
VCC = 3.0 V to 3.6 V
1.3
2.2
3.2
ns
CI
input capacitance
-
1.0
-
pF
CPD
power dissipation
capacitance
VCC = 1.8 V; f = 1 MHz
[1] [2] -
3.3
-
pF
VCC = 3.3 V; f = 1 MHz
[1] [2] -
4.2
-
pF
Table 2:
Ordering information
Type number
Package
Temperature range
Name
Description
Version
74AUP1G0832GW
−40 °C to +125 °C
SC-88
plastic surface mounted package; 6 leads
SOT363
74AUP1G0832GM
−40 °C to +125 °C
XSON6
plastic extremely thin small outline package; no leads;
6 terminals; body 1
× 1.45 × 0.5 mm
SOT886
74AUP1G0832GF
−40 °C to +125 °C
XSON6
plastic extremely thin small outline package; no leads;
6 terminals; body 1
× 1 × 0.5 mm
SOT891


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