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BF901R Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BF901R Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 7 page November 1992 3 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Device mounted on an FR4 printboard. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V VD-G2 drain-gate 2 voltage − 6V ID DC drain current − 30 mA ±I G1-S gate 1-source current − 10 mA ±IG2-S gate 2-source current − 10 mA Ptot total power dissipation BF901 up to Tamb = 50 °C (note 1) − 200 mW BF901R up to Tamb = 40 °C (note 1) − 200 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER THERMAL RESISTANCE Rth j-a thermal resistance from junction to ambient (note 1) BF901 500 K/W BF901R 550 K/W Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 240 0 120 MBB756 150 Ptot (mW) T ( °C) amb BF901R BF901 |
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