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BF824W Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BF824W
Spiegazioni elettronici  PNP medium frequency transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF824W Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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1999 Apr 15
3
Philips Semiconductors
Product specification
PNP medium frequency transistor
BF824W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−50
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−100
nA
hFE
DC current gain
IC = −1 mA; VCE = −10 V
25
IC = −4 mA; VCE = −10 V
25
VBE
base-emitter voltage
IC = −4 mA; VCE = −10 V
−−900
mV
Crb
feedback capacitance
IC = 0; VCE = −10 V; f = 1 MHz
0.3
pF
fT
transition frequency
VCE = −10 V; f = 100 MHz; note 1
IC = −1 mA
250
MHz
IC = −4 mA
400
MHz
IC = −8 mA
390
MHz


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