1999 Apr 21

2

Philips Semiconductors

Product specification

NPN high-voltage transistors

BF620; BF622

FEATURES

• Low current (max. 50 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Video output stages.

DESCRIPTION

NPN high-voltage transistor in a SOT89 plastic package.

PNP complements: BF621 and BF623.

MARKING

TYPE NUMBER

MARKING CODE

BF620

DC

BF622

DA

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

123

Bottom view

MAM296

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF620

−

300

V

BF622

−

250

V

collector-emitter voltage

open-base

BF620

−

300

V

BF622

−

250

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

50

mA

peak collector current

−

100

mA

peak base current

−

50

mA

total power dissipation

−

1.25

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C