BF245C datasheet(4/11 Pages) PHILIPS

Il numero della parte	BF245C

Spiegazioni elettronici	N-channel silicon field-effect transistors

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Produttore elettronici	PHILIPS [NXP Semiconductors]

Homepage	http://www.nxp.com

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4 / 11 page

1996 Jul 30

4

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF245A; BF245B; BF245C

DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Cis

input capacitance

VDS = 20 V; VGS = −1 V; f = 1 MHz

−

4

−

pF

Crs

reverse transfer capacitance

VDS = 20 V; VGS = −1 V; f = 1 MHz

−

1.1

−

pF

Cos

output capacitance

VDS = 20 V; VGS = −1 V; f = 1 MHz

−

1.6

−

pF

gis

input conductance

VDS =15V;VGS = 0; f = 200 MHz

−

250

−µS

gos

output conductance

VDS =15V;VGS = 0; f = 200 MHz

−

40

−µS

yfs

forward transfer admittance

VDS =15V;VGS = 0; f = 1 kHz

3

−

6.5

mS

VDS =15V;VGS = 0; f = 200 MHz

−

6

−

mS

yrs

reverse transfer admittance

VDS =15V;VGS = 0; f = 200 MHz

−

1.4

−

mS

yos

output admittance

VDS =15V;VGS =0;f=1kHz

−

25

−µS

fgfs

cut-off frequency

VDS =15V;VGS =0;gfs = 0.7 of its

value at 1 kHz

−

700

−

MHz

F

noise ﬁgure

VDS =15V;VGS = 0; f = 100 MHz;

RG =1kΩ (common source);

input tuned to minimum noise

−

1.5

−

dB

handbook, halfpage

−10

−10−3

−10−2

−10−1

−1

150

50

0

MGE785

100

typ

Tj (°C)

IGSS

(nA)

Fig.2

Gate leakage current as a function of

junction temperature; typical values.

VDS = 0; VGS = −20 V.

Fig.3

Transfer characteristics for BF245A;

typical values.

handbook, halfpage

VGS (V)

ID

(mA)

6

0

−40

−2

MGE789

5

4

3

2

1

VDS = 15 V; Tj =25 °C.

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