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BF1102 Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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BF1102 Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 1999 Jul 08 6 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 Fig.7 Drain current as a function of gate 1 current; typical values. VDS =5 V; VG2-S =4 V; Tj =25 °C. handbook, halfpage 020 60 25 0 5 20 15 10 MGS364 40 ID (mA) IG1 (µA) Fig.8 Drain current as a function of gate 1 supply voltage (= VGG); typical values. VDS =5 V; VG2-S =4 V; Tj =25 °C. RG1 =120 k Ω (connected to VGG); see Fig.17. handbook, halfpage 0 15 10 5 0 1 MGS365 23 5 4 ID (mA) VGG (V) Fig.9 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values. VG2-S =4 V; Tj =25 °C. RG1 connected to VGG; see Fig.17. handbook, halfpage 010 30 0 10 20 MGS366 2468 ID (mA) VGG = VDS (V) RG1 = 47 kΩ 68 k Ω 82 k Ω 100 k Ω 120 k Ω 150 k Ω 180 k Ω 220 k Ω VDS =5 V; Tj =25 °C. RG1 =120 k Ω (connected to VGG); see Fig.17. Fig.10 Drain current as a function of gate 2 voltage; typical values. handbook, halfpage 02 6 20 0 16 MGS367 4 12 8 4 VG2-S (V) ID (mA) 4.5 V 4 V 3.5 V 3 V VG1-S = 5 V |
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