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BD231 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BD231 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 21 2 Philips Semiconductors Product specification PNP power transistor BD231 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage MAM272 12 3 Top view 1 2 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−100 V VCEO collector-emitter voltage open base −−80 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−1.5 A ICM peak collector current −−3A IBM peak base current −−1A Ptot total power dissipation Tmb ≤ 62 °C − 12.5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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Descrizione simile - BD231 |
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