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AD8397ARZ Scheda tecnica(PDF) 7 Page - Analog Devices |
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AD8397ARZ Scheda tecnica(HTML) 7 Page - Analog Devices |
7 / 16 page AD8397 Rev. 0 | Page 7 of 16 ABSOLUTE MAXIMUM RATINGS Table 5. Parameter Rating Supply Voltage 26.4 V Power Dissipation1 See Figure 4 Storage Temperature −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature Range (Soldering 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sec- tion of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1 Thermal resistance for standard JEDEC 4-layer board: 8-lead SOIC: θJA = 157.6°C/W 8-Lead SOIC EPAD: θJA = 47.2°C/W MAXIMUM POWER DISSIPATION The maximum power that can be dissipated safely by the AD8397 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –40 –30 –20 –10 0 1020 304050 60708090 AMBIENT TEMPERATURE ( °C) TJ = 150°C 8-LEAD SOIC 8-LEAD SOIC EPAD Figure 4. Maximum Power Dissipation vs. Temperature ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec- trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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