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BDW24 Scheda tecnica(PDF) 2 Page - Bourns Electronic Solutions |
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BDW24 Scheda tecnica(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS 2 PRODU CT INFORMA TION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -100 mA IB = 0 (see Note 3) BDW24 BDW24A BDW24B BDW24C -45 -60 -80 -100 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -30 V VCE = -40 V VCE = -50 V IB =0 IB =0 IB =0 IB =0 BDW24 BDW24A BDW24B BDW24C -0.5 -0.5 -0.5 -0.5 mA ICBO Collector cut-off current VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V IE =0 IE =0 IE =0 IE =0 BDW24 BDW24A BDW24B BDW24C -0.2 -0.2 -0.2 -0.2 mA IEBO Emitter cut-off current VEB = -5 V IC =0 -2 mA hFE Forward current transfer ratio VCE = -3 V VCE = -3 V VCE = -3 V IC = -1 A IC = -2 A IC = -6 A (see Notes 3 and 4) 1000 750 100 20000 VCE(sat) Collector-emitter saturation voltage IB = -8 mA IB = -60 mA IC = -2 A IC = -6 A (see Notes 3 and 4) -2 -3 V VBE(sat) Base-emitter saturation voltage IB = -8 mA IC = -2 A (see Notes 3 and 4) -2.5 V VBE(on) Base-emitter voltage VCE = -3 V VCE = -3 V IC = -1 A IC = -6 A (see Notes 3 and 4) -2.5 -3 V VEC Parallel diode forward voltage IE = -2 A IB = 0 -1.8 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = -3 A VBE(off) = 4.5 V IB(on) = -12 mA RL = 10 Ω IB(off) = 12 mA tp = 20 µs, dc ≤ 2% 1µs toff Turn-off time 5µs |
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