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STPS60150C Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STPS60150C Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 6 page STPS60150C 2/6 Table 4: Thermal Parameters Table 5: Static Electrical Characteristics (per diode) Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.6 x IF(AV) + 0.0053 IF 2 (RMS) Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 1.0 0.7 °C/W Rth(c) Coupling 0.4 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Symbol Parameter Tests conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 315 µA Tj = 125°C 3 10 mA VF ** Forward voltage drop Tj = 25°C IF = 30A 0.94 V Tj = 125°C IF = 30A 0.72 0.76 Tj = 25°C IF = 60A 0.97 1.05 Tj = 125°C IF = 60A 0.86 0.92 |
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