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BAS12 Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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BAS12 Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
5 / 7 page 1996 Sep 26 5 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 Fig.6 Reverse current as a function of junction temperature; maximum values. handbook, halfpage 200 0 50 100 102 10−1 MGD297 10 IR ( µA) 1 150 Tj ( oC) VR =VRRMmax. Fig.7 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage MGD296 - 1 10 VR(V) 1 10−1 102 103 10 Cd (pF) 1 Fig.8 Device mounted on a printed-circuit board. handbook, halfpage MGA200 3 2 7 50 25 50 Dimensions in mm. |
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