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BA891 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BA891 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1998 Aug 31 3 Philips Semiconductors Product specification Band-switching diode BA891 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 85 K/W GRAPHICAL DATA Fig.2 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 010 20 30 1 0 0.8 0.6 0.4 0.2 MGL479 VR (V) Cd (pF) Fig.3 Diode forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 10 1 10−1 MGL478 10−1 110 IF (mA) rD ( Ω) |
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