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2SK3446 Scheda tecnica(PDF) 6 Page - Renesas Technology Corp |
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2SK3446 Scheda tecnica(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page 2SK3446 Rev.6, Jan. 2003, page 6 of 10 Drain Source Voltage V (V) DS Typical Capacitance vs. Drain Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics 010 20 30 40 50 1000 100 300 10 3 1 30 V = 0 f = 1 MHz GS Ciss Coss Crss Reverse Drain Current I (A) DR Body-Drain Diode Reverse Recovery Time 0.1 0.3 1 3 10 1000 100 30 1 10 3 300 di / dt = 100 A / µs V = 0, Ta = 25 °C GS 160 120 80 40 0 8 6 4 2 24 6 8 10 0 VGS VDS I = 1 A D VDD = 100 V 50 V 25 V VDD = 100 V 50 V 25 V Drain Current I (A) D Switching Characteristics 30 100 3 10 1 0.1 0.3 1 3 10 V = 4 V, V = 30 V PW = 5 µs, duty < 1 % GS DD t f r t d(on) t d(off) t |
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