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74LVCU04APW Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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74LVCU04APW Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 10 page Philips Semiconductors Product specification 74LVCU04A Hex inverter 1998 Jul 29 4 ABSOLUTE MAXIMUM RATINGS1 In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0V). SYMBOL PARAMETER CONDITIONS RATING UNIT VCC DC supply voltage –0.5 to +6.5 V IIK DC input diode current VI t 0 –50 mA VI DC input voltage Note 2 –0.5 to +6.5 V IOK DC output diode current VO uVCC or VO t 0 "50 mA VI/O DC output voltage; output HIGH or LOW Note 2 –0.5 to VCC +0.5 V VI/O DC input voltage; output 3-State Note 2 –0.5 to 6.5 V IO DC output source or sink current VO = 0 to VCC "50 mA IGND, ICC DC VCC or GND current "100 mA Tstg Storage temperature range –65 to +150 °C Power dissipation per package PTOT – plastic mini-pack (SO) above +70 °C derate linearly with 8 mW/K 500 mW – plastic shrink mini-pack (SSOP and TSSOP) above +60 °C derate linearly with 5.5 mW/K 500 mW NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. DC ELECTRICAL CHARACTERISTICS Over recommended operating conditions. Voltages are referenced to GND (ground = 0V). LIMITS SYMBOL PARAMETER TEST CONDITIONS Temp = -40 °C to +85°C UNIT MIN TYP1 MAX VCC = 1.2 V;VOL(max) = 0.5 V; IO = -100 mA VCC VCC = 2.0 V; VOL(max) = 0.5 V; IO = -100 mA 1.2 VIH HIGH level Input voltage VCC = 2.7 V; VOL(max) = 0.5 V; IO = -100 mA 1.8 V VCC = 3.0 V; VOL(max) = 0.5 V; IO = -100 mA 2.0 VCC = 3.6 V; VOL(max) = 0.5 V; IO = -100 mA 2.4 VCC = 1.2 V; VOH(min) = VCC – 0.5 V; IO = 100 mA GND VCC = 2.0 V; VOH(min) = VCC – 0.5 V; IO = 100 mA 0.6 VIL LOW level Input voltage VCC = 2.7 V; VOH(min) = VCC – 0.5 V; IO = 100 mA 0.6 V VCC = 3.0 V; VOH(min) = VCC – 0.5 V; IO = 100 mA 1.0 VCC = 3.6 V; VOH(min) = VCC – 0.5 V; IO = 100 mA 1.2 VCC = 2.7 V; VCC or GND; IO = -12 mA VCC*0.5 VO HIGH level output voltage VCC = 3.0 V; VCC or GND; IO = -100mA VCC*0.2 VCC V VOH HIGH level output voltage VCC = 3.0 V; VCC or GND; IO = -12 mA VCC*0.6 V VCC = 3.0 V; VCC or GND; IO = -24 mA VCC*1.0 VCC = 2.7 V; VCC or GND; IO = 12 mA 0.40 VOL LOW level output voltage VCC = 3.0 V; VCC or GND; 12mA; IO = 100µA 0.20 V VCC = 3.0 V; VCC or GND; IO = 24mA 0.55 I Input leakage current VCC =3 6V; 55VorGND; Not for I/O pins "01 "5 µA II Input leakage current VCC = 3.6 V; 5.5 V or GND; Not for I/O pins "0.1 "5 µA ICC Quiescent supply current VCC = 3.6 V; VCC or GND; IO = 0 0.1 10 µA NOTE: 1. All typical values are at VCC = 3.3V and Tamb = 25°C. |
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