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STP80NF10 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STP80NF10 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STP80NF10 - STB80NF10 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0 100 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 40A 0.012 0.015 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Forward transconductance VDS =25V , ID =40 A 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 5500 700 175 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 50V, ID = 80A, VGS = 10V 135 23 51.3 182 nC nC nC |
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