SI6943BDQ datasheet(1/5 Pages) VISHAY

Il numero della parte	SI6943BDQ

Spiegazioni elettronici	Dual P-Channel 2.5-V (G-S) MOSFET

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Si6943BDQ

Vishay Siliconix

New Product

Document Number: 72016

S-21780—Rev. A, 07-Oct-02

www.vishay.com

1

Dual P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.08 @ VGS = -4.5 V

-2.5

-12

0.105 @ VGS = -2.5 V

- 1.9

Si6943BDQ

D1

S1

G1

1

2

3

4

8

7

6

5

D2

S2

G2

TSSOP-8

Top View

D

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

-12

Gate-Source Voltage

VGS

"8

V

_

TA = 25_C

- 2.5

-2.3

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

-2.2

-1.8

Pulsed Drain Current (10

ms Pulse Width)

IDM

-20

A

Continuous Source Current (Diode Conduction)a

IS

-1.0

-0.7

TA = 25_C

1.10

0.80

Maximum Power Dissipationa

TA = 70_C

PD

0.70

0.50

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 10 sec

89

110

Maximum Junction-to-Ambienta

Steady State

RthJA

120

150

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

70

90

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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