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SI6943BDQ Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI6943BDQ Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Si6943BDQ Vishay Siliconix New Product Document Number: 72016 S-21780—Rev. A, 07-Oct-02 www.vishay.com 1 Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.08 @ VGS = -4.5 V -2.5 -12 0.105 @ VGS = -2.5 V - 1.9 Si6943BDQ D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 TSSOP-8 Top View D S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS "8 V _ TA = 25_C - 2.5 -2.3 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID -2.2 -1.8 Pulsed Drain Current (10 ms Pulse Width) IDM -20 A Continuous Source Current (Diode Conduction)a IS -1.0 -0.7 TA = 25_C 1.10 0.80 Maximum Power Dissipationa TA = 70_C PD 0.70 0.50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 10 sec 89 110 Maximum Junction-to-Ambienta Steady State RthJA 120 150 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 70 90 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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