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BC338-25ZL1 Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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BC338-25ZL1 Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 4 1 Publication Order Number: BC337/D BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc Collector − Base Voltage VCBO 50 30 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com TO−92 (TO−226) CASE 29 See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION MARKING DIAGRAM xxxx = Specific Device Code Y = Year WW = Work Week COLLECTOR 1 2 BASE 3 EMITTER BC33 xxxx YWW |
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