LA733Q datasheet(2/4 Pages) ONSEMI

Il numero della parte	LA733Q

Spiegazioni elettronici	Amplifier Transistors (PNP Silicon)

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Produttore elettronici	ONSEMI [ON Semiconductor]

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LA733P, LA733Q

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)

V(BR)CEO

–48

–

Vdc

Collector–Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

V(BR)CBO

–60

–

Vdc

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

–

Vdc

Collector–Base Leakage Current

(VCB = –60 V)

ICBO

–

–100

nAdc

Emitter–Base Leakage Current

(VEB = –5.0 V, IC = 0)

IEBO

–

–100

nAdc

Collector–Emitter Leakage Current

(VCE = –50 V)

ICEO

–

–1.0

mA

ON CHARACTERISTICS

DC Current Gain

(IC = –1.0 mAdc, VCE = –6.0 Vdc)

LA733P

LA733Q

hFE

200

135

–

400

270

–

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

VCE(sat)

–

–0.3

Vdc

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

VBE(sat)

–

–0.9

Vdc

Base–Emitter On Voltage

(IC = –1.0 mAdc, VCE = –6.0 Vdc)

VBE(on)

–0.55

–

–0.68

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = –10 mAdc, VCE = –6.0 Vdc, f = 20 MHz)

fT

100

–

450

MHz

Common–Base Output Capacitance

(VCB = –60 Vdc, IC = 0, f = 1.0 MHz)

Cob

–

7.0

pF

Noise Figure

(IC = –0.3 mAdc, VCE = –6.0 Vdc,

RG = 10 kW, f = 100 mHz)

NF

–

18

dB

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