WV3HG64M64EEU-D4

May 2006

Rev. 2

ADVANCED

5

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

INPUT/OUTPUT CAPACITANCE

Parameter

Symbol

Min

Max

Units

Input Capacitance (A0~A13, BA0~BA1, RAS#, CAS#, WE#)

12

20

pF

Input Capacitance CKE0, ODT

12

20

pF

Input Capacitance CS0#

12

20

pF

Input Capacitance (CK0, CK0#, CK1, CK1#)

812

pF

Input Capacitance (DM0 ~ DM7), (DQS0 ~ DQS7)

6.5

7.5

pF

6.5

8

pF

Input Capacitance (DQ0 ~ DQ63)

6.5

7.5

pF

6.5

8

pF

Notes:

• AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different.

OPERATING TEMPERATURE CONDITION

Parameter

Symbol

Rating

Units

Notes

Operating temperature

TOPER

°C

1, 2

Notes:

1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measuremnet conditions, please refer to JEDED JESD51.2

2. At 0°C - 85°C, operation temperature range, all DRAM specification will be supported.

INPUT DC LOGIC LEVEL

Parameter

Symbol

Min

Max

Units

Input High (Logic 1) Voltage

V

Input Low (Logic 0) Voltage

-0.300

V

INPUT AC LOGIC LEVEL

Parameter

Symbol

Min

Max

Units

Input High (Logic 1) Voltage DDR2-400 & DDR2-533

-

V

Input Low (Logic 1) Voltage DDR2-667

-

V

Input Low (Logic 0) Voltage DDR2-400 & DDR2-533

-

V

Input Low (Logic 0) Voltage DDR2-667

-

V