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74HC1G08 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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74HC1G08 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2002 May 17 2 Philips Semiconductors Product specification 2-input AND gate 74HC1G08; 74HCT1G08 FEATURES • Wide supply voltage range from 2.0 to 6.0 V • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • Very small 5 pins package • Output capability: standard. DESCRIPTION The 74HC1G/HCT1G08 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G08 provides the 2-input AND function. The standard output currents are 1 ⁄2 compared to the 74HC/HCT08. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC − 1.5 V. FUNCTION TABLE See note 1. Note 1. H = HIGH voltage level; L = LOW voltage level. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC1G HCT1G tPHL/tPLH propagation delay A and B to Y CL = 15 pF; VCC = 5 V 7 11 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance notes 1 and 2 19 21 pF INPUTS OUTPUT AB Y LLL LHL HL L HHH |
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