SI4416DY-T1 datasheet(2/4 Pages) VISHAY

Il numero della parte	SI4416DY-T1

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

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Si4416DY

Vishay Siliconix

www.vishay.com

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Document Number: 72266

S-31062—Rev. E, 26-May-03

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

25

mA

On-State Drain Currentb

ID(on)

VDS w 5 V, VGS = 10 V

20

A

Drain Source On State Resistanceb

rDS( )

VGS = 10 V, ID = 9.0 A

0.012

0.018

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4.5 V, ID = 7.3 A

0.019

0.028

W

Forward Transconductanceb

gfs

VDS = 15 V, ID = 9.0 A

23

S

Diode Forward Voltageb

VSD

IS = 2.1 A, VGS = 0 V

1.2

V

Dynamica

Gate Charge

Qg

VDS = 15 V, VGS = 5 V, ID = 9.0 A

14

20

Total Gate Charge

Qgt

24

35

nC

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 10 V, ID = 9.0 A

4.5

nC

Gate-Drain Charge

Qgd

DS

,

GS

, D

5.9

Gate Resistance

Rg

0.2

1.0

2.4

W

Turn-On Delay Time

td(on)

16

20

Rise Time

tr

VDD = 15 V, RL = 15 W

10

20

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

34

50

ns

Fall Time

tf

13

20

Source-Drain Reverse Recovery Time

trr

IF = 2.1 A, di/dt = 100 A/ms

50

90

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0

1234

5

0

10

20

30

40

50

0

1234

5

VGS = 10 thru 5 V

25

_C

TC = 125_C

-55

_C

3 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

4 V

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