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74F175A Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte 74F175A
Spiegazioni elettronici  Quad D flip-flop
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74F175A Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
74F175A
Quad D flip-flop
2
1996 Mar 12
853–0047 16555
FEATURES
Four edge-triggered D-type flip-flops
Buffered common clock
Buffered asynchronous Master Reset
True and complementary outputs
Industrial temperature range available (–40°C to +85°C)
PNP light loading inputs
DESCRIPTION
The 74F175A is a quad, edge-triggered D-type flip-flop with
individual D inputs and both Q and Q outputs. The common buffered
Clock (CP) and Master Reset (MR) inputs load and reset (clear) all
flip-flops simultaneously.
The register is fully edge-triggered. The state of each D input, one
setup time before the Low-to-High clock transition is transferred to
the corresponding flip-flop’s Q output.
All Q outputs will be forced Low independently of clock or data
inputs by a Low voltage level on the MR input. The device is useful
for applications where both true and complementary outputs are
required, and the CP and MR are common to all storage elements.
PIN CONFIGURATION
16
15
14
13
12
11
10
7
6
5
4
3
2
1
9
8
VCC
SF00718
Q3
Q3
D3
D2
Q2
Q2
CP
MR
Q0
Q0
D0
D1
Q1
Q1
GND
TYPE
TYPICAL fmax
TYPICAL SUPPLY
CURRENT (TOTAL)
74F175A
160MHz
22mA
ORDERING INFORMATION
ORDER CODE
DESCRIPTION
COMMERCIAL RANGE
VCC = 5V ±10%,
Tamb = 0°C to +70°C
PKG. DWG. #
16-pin plastic DIP
74F175AN
SOT38-4
16-pin plastic SO
74F175AD
SOT109-1
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS
DESCRIPTION
74F (U.L.)
HIGH/LOW
LOAD VALUE
HIGH/LOW
D0 – D3
Data inputs
74F175A
1.0/0.033
20
µA/20µA
MR
Master reset input (active–Low)
74F175A
1.0/0.033
20
µA/20µA
CP
Clock input (active rising edge)
74F175A
1.0/0.033
20
µA/20µA
Q0–Q3
True outputs
50/33
1.0mA/20mA
Q0–Q3
Complementary outputs
50/33
1.0mA/20mA
NOTE:
One (1.0) FAST unit load is defined as: 20
µA in the High state and 0.6mA in the Low state.


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