TPC8013-H datasheet(6/7 Pages) TOSHIBA

Il numero della parte	TPC8013-H

Spiegazioni elettronici	Silicon N Channel MOS Type (High speed U-MOS III)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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6 / 7 page

TPC8013-H

2002-03-25

6

Drain-source voltage VDS (V)

Safe operating area

Pulse width tw (S)

rth - tw

0.01

0.1

1

10

100

0.1

1

10

100

* Single pulse

Ta

= 25°C

Curves must be derated

linearly with increase in

temperature.

ID max (pluse) *

10 ms*

1 ms*

VDSS max

0.1

0.001

0.01

0.1

10

100

1000

1

100

1000

Single pulse

1

(2)

10

(1)

Device mounted on a glass-epoxy board (a)

(Note 2a)

(2)

Device mounted on a glass-epoxy board (b)

(Note 2b)

t

= 10 s

(1)

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