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TPC8013-H Scheda tecnica(PDF) 6 Page - Toshiba Semiconductor |
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TPC8013-H Scheda tecnica(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPC8013-H 2002-03-25 6 Drain-source voltage VDS (V) Safe operating area Pulse width tw (S) rth - tw 0.01 0.01 0.1 1 10 100 0.1 1 10 100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pluse) * 10 ms* 1 ms* VDSS max 0.1 0.001 0.01 0.1 10 100 1000 1 100 1000 Single pulse 1 (2) 10 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) |
Codice articolo simile - TPC8013-H |
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Descrizione simile - TPC8013-H |
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