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PH2729-110M Scheda tecnica(PDF) 1 Page - Tyco Electronics |
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PH2729-110M Scheda tecnica(HTML) 1 Page - Tyco Electronics |
1 / 2 page Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 PH2729-110M 1 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage IC = 50mA BVCES 63 - V Collector-Emitter Leakage Current VCE = 36V ICES - 7.5 mA Thermal Resistance Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz RTH(JC) - 0.3 °C/W Output Power Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz POUT 110 - W Power Gain Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz GP 6.8 - dB Collector Efficiency Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz η C 35 - % Input Return Loss Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz VSWR-T - 2:1 - Load Mismatch Stability Vcc = 36V, Pin = 23W F = 2.7, 2.8, 2.9 GHz VSWR-S - 1.5:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 63 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 8.0 A Power Dissipation @ +25°C PTOT 330 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Outline Drawing |
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