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74AHCT1G07GV Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte 74AHCT1G07GV
Spiegazioni elettronici  Buffer with open-drain output
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT1G07GV Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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2002 Oct 02
4
Philips Semiconductors
Product specification
Buffer with open-drain output
74AHC1G07; 74AHCT1G07
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC
74AHCT
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
VI
input voltage
0
5.5
0
5.5
V
VO
output voltage
active mode
0
VCC
0
VCC
V
high-impedance mode
0
6.0
0
6.0
V
Tamb
ambient
temperature
see DC and AC
characteristics per device
−40
+25
+85
−40
+25
+85
°C
−40
+25
+125
−40
+25
+125
°C
tr,tf (∆t/∆f)
input rise and fall
times ratios
VCC = 3.3 ±0.3 V
−−
100
−−−
ns/V
VCC =5 ±0.5 V
−−
20
−−
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+7.0
V
VI
input voltage
−0.5
+7.0
V
IIK
input diode current
VI < −0.5 V; note 1
−−20
mA
IOK
output clamping diode
current
VO < −0.5 V; note 1
−±20
mA
VO
output voltage
active mode; note 1
−0.5
+7.0
V
high-impedance mode; note 1
−0.5
+7.0
V
IO
output sink current
VO > −0.5 V
−±25
mA
ICC
VCC or GND current
−±75
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per
package
for temperature range from
−40 to +125 °C
250
mW


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