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74AHCT1G07GV Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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74AHCT1G07GV Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 2002 Oct 02 4 Philips Semiconductors Product specification Buffer with open-drain output 74AHC1G07; 74AHCT1G07 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. SYMBOL PARAMETER CONDITIONS 74AHC 74AHCT UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V VI input voltage 0 − 5.5 0 − 5.5 V VO output voltage active mode 0 − VCC 0 − VCC V high-impedance mode 0 − 6.0 0 − 6.0 V Tamb ambient temperature see DC and AC characteristics per device −40 +25 +85 −40 +25 +85 °C −40 +25 +125 −40 +25 +125 °C tr,tf (∆t/∆f) input rise and fall times ratios VCC = 3.3 ±0.3 V −− 100 −−− ns/V VCC =5 ±0.5 V −− 20 −− 20 ns/V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V VI input voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V; note 1 −−20 mA IOK output clamping diode current VO < −0.5 V; note 1 −±20 mA VO output voltage active mode; note 1 −0.5 +7.0 V high-impedance mode; note 1 −0.5 +7.0 V IO output sink current VO > −0.5 V −±25 mA ICC VCC or GND current −±75 mA Tstg storage temperature −65 +150 °C PD power dissipation per package for temperature range from −40 to +125 °C − 250 mW |
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