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2N3553 Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte 2N3553
Spiegazioni elettronici  Silicon planar epitaxial overlay transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2N3553 Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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1995 Oct 27
4
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. Pulsed through an inductor of 25 mH;
δ = 0.5; f = 50 Hz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.25 mA
65
−−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC up to 200 mA;
note 1
40
−−
V
V(BR)CEX
collector-emitter breakdown voltage
IC up to 200 mA; VBE = −1.5 V;
RB =33 Ω; note 1
65
−−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.25 mA
4
−−
V
VBE
base-emitter voltage
IC = 250 mA; VCE =5V
−−
1.5
V
VCEsat
collector-emitter saturation voltage
IC = 250 mA; IB =50mA
−−
1.0
V
ICEO
collector leakage current
open base; VCE =30V
−−
0.1
mA
hFE
DC current gain
VCE =5V; IC = 125 mA
15
200
VCE =5V; IC = 250 mA
10
100
fT
transition frequency
IC = 125 mA; VCE =28V
500
MHz
Rhoie)
real part of input impedance
IC = 125 mA; VCE =28V;
f = 200 MHz
−−
20
Cc
collector capacitance
VCB = 28 V; IE =ie =0;
f=1MHz
−−
10
pF
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
0
100
200
300
400
hFE
60
20
0
40
MGC935
500
IC (mA)
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
5
20
15
10
020
40
60
(pF)
Cc
VCB (V)
MGC930


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