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2N3553 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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2N3553 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1995 Oct 27 4 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistor 2N3553 CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulsed through an inductor of 25 mH; δ = 0.5; f = 50 Hz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.25 mA 65 −− V V(BR)CEO collector-emitter breakdown voltage open base; IC up to 200 mA; note 1 40 −− V V(BR)CEX collector-emitter breakdown voltage IC up to 200 mA; VBE = −1.5 V; RB =33 Ω; note 1 65 −− V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.25 mA 4 −− V VBE base-emitter voltage IC = 250 mA; VCE =5V −− 1.5 V VCEsat collector-emitter saturation voltage IC = 250 mA; IB =50mA −− 1.0 V ICEO collector leakage current open base; VCE =30V −− 0.1 mA hFE DC current gain VCE =5V; IC = 125 mA 15 − 200 VCE =5V; IC = 250 mA 10 − 100 fT transition frequency IC = 125 mA; VCE =28V − 500 − MHz Rhoie) real part of input impedance IC = 125 mA; VCE =28V; f = 200 MHz −− 20 Ω Cc collector capacitance VCB = 28 V; IE =ie =0; f=1MHz −− 10 pF Fig.4 DC current gain as a function of collector current; typical values. handbook, halfpage 0 100 200 300 400 hFE 60 20 0 40 MGC935 500 IC (mA) Fig.5 Collector capacitance as a function of collector-base voltage; typical values. handbook, halfpage 0 5 20 15 10 020 40 60 (pF) Cc VCB (V) MGC930 |
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