1999 May 25

2

Philips Semiconductors

Preliminary specification

Schottky barrier diode

1PS76SB17

FEATURES

• Low forward voltage

• Low diode capacitance

• ESD > 500 V; Human body model

• Very small plastic SMD package.

APPLICATIONS

• UHF mixers

• Sampling circuits

• Modulators

• Phase detectors.

DESCRIPTION

Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

SMD package.

Fig.1 Simplified outline (SOD323) and symbol.

Marking code: S7.

The marking bar indicates the cathode.

handbook, 4 columns

ka

MAM283

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Note

1. Refer to SOD323 standard mounting conditions.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

continuous reverse voltage

−

4V

continuous forward current

−

30

mA

storage temperature

−65

+150

°C

junction temperature

−

100

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

see Fig.2

−

300

mV

360

450

mV

470

600

mV

reverse current

0.15

0.25

µA

diode capacitance

0.8

1

pF

0.65

−

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

450

K/W