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1PS301 Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte 1PS301
Spiegazioni elettronici  High-speed double diode
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1PS301 Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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1999 May 06
2
Philips Semiconductors
Product specification
High-speed double diode
1PS301
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS301 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the very small rectangular plastic
SMD SC70-3 package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
Fig.1 Simplified outline (SOT323; SC70-3) and symbol.
Top view
21
3
MAM084
21
3
Marking code: B3.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse
voltage
85
V
VR
continuous reverse voltage
80
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
250
mA
double diode loaded; note 1; see Fig.2
160
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to surge
t=1
µs
4A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C


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