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STD4530NL Scheda tecnica(PDF) 1 Page - SamHop Microelectronics Corp. |
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STD4530NL Scheda tecnica(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page 30 N-Channel E nhancement Mode Field E ffect Transistor TO251 and TO 252 Package. ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS 20 V Drain Current-Continuous @ TC=25 C -Pulsed ID 45 110 20 50 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 175 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R JA 50 /W C S T U/D4530NL a S amHop Microelectronics C orp. 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max 30V 45A 9.5 @ V GS = 10V 19 @ V GS = 4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S TU S E R IE S TO-252AA(D-PAK) S TD S E R IE S TO-251(l-PAK) G G S S D D Thermal R esistance, Junction-to-Case R JC 3 /W C AP R 28,2005 S G D |
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