TPCS8303 datasheet(5/7 Pages) TOSHIBA

Il numero della parte	TPCS8303

Spiegazioni elettronici	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCS8303

2004-07-06

5

30

40

010

20

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain

−source voltage VDS (V)

IDR – VDS

Drain

−source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Total gate charge Qg (nC)

Dynamic input/output

characteristics

Common source

Pulse test

0

10

20

30

40

50

60

−80

−40

0

40

80

120

160

VGS = −2 V

VGS = −2.5 V

VGS = −4.5 V

ID = −5 A

−2.5

−1.3

Common source

Ta

= 25°C

Pulse test

0

0.2

0.4

0.6

0.8

1.0

1.2

−0.1

−100

−1

−10 −10 V

−5

−3

VGS = 0 V

Common source

Ta

= 25°C

VGS = 0 V

f

= 1 MHz

Ciss

Coss

Crss

100

1000

10000

10

30

300

3000

−0.1

−1

−10

−100

−0.3

−3

−30

−80

−40

0

40

80

160

120

Common source

VDS = −10 V

ID = −200 µA

Pulse test

0

−1.2

−1.0

−0.2

(1)

(4)

(3)

(2)

0

0.25

0.5

0.75

1.0

1.25

0

40

80

160

120

200

−4

Common source

ID = −5 A

Ta

= 25°C, Pulse test

0

−2

−4

−6

−8

VDD = −16 V

0

−5

−10

−15

−20

VDS

−8

VDD = −16 V

VGS

ID = −5 A, −2.5 A, −1.3 A

−1

−4

−8

−0.6

−0.8

−0.4

Device mounted on a glass-epoxy

board (a)

(Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual

operation

(Note 3b)

Device mounted on a glass-epoxy

board (b)

(Note 2b)

(3) Single-device operation

(Note 3a)

(4) Single-device value at dual

operation

(Note 3b)

t

= 10 s

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