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SI3225 Scheda tecnica(PDF) 5 Page - Silicon Laboratories |
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SI3225 Scheda tecnica(HTML) 5 Page - Silicon Laboratories |
5 / 112 page Si3220/25 Rev. 1.2 5 Table 2. Recommended Operating Conditions Parameter Symbol Test Condition Min* Typ Max* Unit Ambient Temperature TA K/F-Grade 0 25 70 oC Ambient Temperature TA B/G-Grade –40 25 85 oC Supply Voltage, Si3220/Si3225 VDD1–VDD4 3.13 3.3/5.0 5.25 V Supply Voltage, Si3200 VDD 3.13 3.3/5.0 5.25 V High Battery Supply Voltage, Si3200 VBATH –15 — –99 V Low Battery Supply Voltage, Si3200 VBATL –15 — VBATH V *Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated. Table 3. 3.3 V Power Supply Characteristics1 (VDD, VDD1 – VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade) Parameter Symbol Test Condition Min Typ Max Unit VDD1–VDD4 Supply Current (Si3220/ Si3225) IVDD1–IVDD4 Sleep mode, RESET = 0 — 200 — µA Open (high-impedance) — 17 — mA Active on-hook standby — 16 — mA Forward/reverse active off-hook —45 + ILIM + ABIAS —mA Forward/reverse active OHT OBIAS = 4 mA, VBAT =–70 V —47— mA Ringing, VRING =45Vrms, VBAT =–70 V, Sine Wave, 1 REN load2 —26— mA Notes: 1. All specifications are for a single channel based on measurements with both channels in the same operating state. 2. See "3.14.4. Ringing Power Considerations" on page 53 for current and power consumption under other operating conditions. 3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must include an additional (VDD + |VBAT|) x ILOOP term. |
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