Motore di ricerca datesheet componenti elettronici |
|
STF4A60S Scheda tecnica(PDF) 2 Page - SemiWell Semiconductor |
|
STF4A60S Scheda tecnica(HTML) 2 Page - SemiWell Semiconductor |
2 / 6 page Electrical Characteristics Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 1.0 mA VTM Peak On-State Voltage IT = 6 A, Inst. Measurement ─ ─ 1.6 V I+GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 5 mA I -GT1 Ⅱ ── 5 I -GT3 Ⅲ ── 5 I+GT3 Ⅳ ─ 812 V+GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.4 V V-GT1 Ⅱ ── 1.4 V-GT3 Ⅲ ── 1.4 V+GT3 Ⅳ ─ 1.6 2.0 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage TJ = 125 °C, Gate open, VD = VDRM 67% 50 ── V/㎲ (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM 5 ── V/㎲ IH Holding Current ─ 5.0 ─ mA Rth(j-c) Thermal Impedance Junction to case ── 4.0 °C/W STF4A60S 2/6 ※ Notes : 1. Pulse Width ≤ 300us , Duty cycle ≤ 2% |
Codice articolo simile - STF4A60S |
|
Descrizione simile - STF4A60S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |