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BTB1424AD3 Scheda tecnica(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1424AD3 Scheda tecnica(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 4 page  CYStech Electronics Corp. Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 1/4 BTB1424AD3 CYStek Product Specification Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424AD3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA. • Complementary to BTD2150AD3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -3 Collector Current(Pulsed) (Note 1) ICP -5 A Power Dissipation(TA=25℃) 1 Power Dissipation(TC=25℃) Pd 10 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. BTB1424AD3 TO-126ML B：Base C：Collector E：Emitter E C B |
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