TPCP8201 datasheet(5/7 Pages) TOSHIBA

Il numero della parte	TPCP8201

Spiegazioni elettronici	Portable Equipment Applications

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCP8201

2004-07-06

5

Drain

−source voltage VDS (V)

Capacitance – VDS

0.1

1

10

100

1000

1

3

5

10

30 50

100

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Ambient temperature Ta (°C)

Vth – Ta

0

1

3

−80

−40

0

40

80

120

160

Common source

VDS = 10 V

ID = 200μA

Pulse test

2

160

−40

0

40

80

120

−80

Common source

Pulse test

120

80

40

0

ID = 4A

2A

VGS = 10V

VGS = 4.5V

ID = 4, 2, 1A

1A

0

0.1

Common source

Ta

= 25°C

Pulse test

-0.2

0.3

0.5

1

3

5

10

-0.6

-0.8

-1.2

VGS = 0 V

5.0

3.0

1.0

10

-0.4

-1.0

Total gate charge Qg (nC)

Dynamic input/output

characteristics

0

4

8

Common source

ID = 4.0A

Ta

= 25°C

Pulse test

VDD = 24V

VDS

VGS

12

16

20

10

0

15

10

0

5

15

12

6

24

12

VDD = 6V

5

100

60

20

30

25

0.3

Ambient temperature Ta (°C)

PD – Ta

2.0

0.8

0

25

50

125

150

0.4

1.2

1.6

200

(1)

(2)

(3)

(4)

75

100

175

Device mounted on a glass-epoxy

board (a)

(Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual

operation

(Note 3b)

Device mounted on a glass-epoxy

board (b)

(Note 2b)

(3) Single-device operation

(Note 3a)

(4) Single-device value at dual

operation

(Note 3b)

t = 5 s

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