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STP180N55 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP180N55 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 11 page TARGET SPECIFICATION Rev 1 January 2006 1/11 11 This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice STB180N55 STP180N55 N-CHANNEL 55V - 2.9m Ω - 120A - D²PAK - TO-220 MDmesh™ Low Voltage Power MOSFET General features ■ ULTRA LOW ON-RESISTANCE ■ 100% AVALANCHE TESTED Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Applications ■ HIGH CURRENT SWITCHING APPLICATION Order codes Internal schematic diagram Type VDSS RDS(on) ID STB180N55 55V 3.5m Ω 120A (Note 1) STP180N55 55V 3.8m Ω 120A (Note 1) 1 3 D²PAK 1 2 3 TO-220 Sales Type Marking Package Packaging STB180N55 B180N55 D²PAK TAPE & REEL STP180N55 P180N55 TO-220 TUBE www.st.com |
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