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F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
Figure 3. C apacitance
V DS , Drain-to S ource Voltage (V )
V GS , G ate-to-S ource Voltage (V )
V DS , Drain-to-S ource Voltage (V )
ID, Drain C urrent(A)
6
40
35
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
-55 C
25 C
40
30
20
10
0
01
23
4
5
6
T j=125 C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
25 C
T j=125 C
-55 C
0
1020
3040
V GS =10V
V GS =4V
V GS =10,9,8,7,6,5V
Cis s
Cos s
Crs s
3600
3000
2400
1800
1200
600
0
0
5
10
15
20
25
30
F igure 5. G a te T hres hold V a ria tion
with T empera ture
T j, J unction T empera ture ( C )
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0
25
50
75
100 125 150
V DS =V GS
ID=250uA
F igure 6. B rea kdown V olta ge V a ria tion
with T empera ture
T j, J unction T empera ture ( C )
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250uA
F igure 7. T rans conductance V a riation
with Dra in C urrent
IDS , Dra in-S ource C urrent (A)
40
30
20
10
50
60
0
0
5
10
15
20
V DS =10V
F igure 8. B ody Diode F orwa rd V olta ge
V a ria tion with S ource C urrent
V SD, B ody Diode F orward V oltage (V )
40
10
0.1
1.0
0.4
0.6
0.8
1.0
1.2
1.4
TYPICAL ELECTRICAL CHARACTERISTICS
IRF40N03
POWER MOSFET
Page 3
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