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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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1N458 Scheda tecnica(PDF) 2 Page - National Semiconductor (TI) |
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1N458 Scheda tecnica(HTML) 2 Page - National Semiconductor (TI) |
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2 / 2 page  Symbol Parameter Test Conditions Min Max Units BV Breakdown Voltage 456/A 457/A 458/A 459/A IR = 100 µA IR = 100 µA IR = 100 µA IR = 100 µA 30 70 150 200 V V V V IR Reverse Current 456/A 457/A 458/A 459/A VR = 25 V VR = 25 V, TA = 150 °C VR = 60 V VR = 60 V, TA = 150 °C VR = 125 V VR = 125 V, TA = 150 °C VR = 175 V VR = 175 V, TA = 150 °C 25 5.0 25 5.0 25 5.0 25 5.0 nA µA nA µA nA µA nA µA VF Forward Voltage 456 457 458 459 456/A-459/A IF = 40 mA IF = 10 mA IF = 7.0 mA IF = 3.0 mA IF = 100 mA 1.0 1.0 1.0 1.0 1.0 V V V V V CO Diode Capacitance VR = 0, f = 1.0 MHz 6.0 pF Electrical Characteristics TA = 25°C unless otherwise noted High Conductance Low Leakage Diode (continued) |
Codice articolo simile - 1N458 |
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Descrizione simile - 1N458 |
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