2SK2383 datasheet(2/3 Pages) PANASONIC

Il numero della parte	2SK2383

Spiegazioni elettronici	Silicon N-Channel Power F-MOS FET

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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2 / 3 page

2

Power F-MOS FETs

2SK2383

Area of safe operation (ASO)

PD  Ta

IAS

 L-load

ID  VGS

Vth  TC

VDS  VGS

RDS(on)  ID

| Yfs |  ID

Ciss, Coss, Crss  VDS

1

10

100

1000

0.01

0.1

1

10

100

Non repetitive pulse

T

C=25˚C

I

DP

t=100

µs

1ms

10ms

100ms

DC

I

D

Drain to source voltage V

DS

(V)

020

40

60

80 100 120 140 160

0

20

40

60

80

100

120

(1) T

C=Ta

(2) Without heat sink

(P

D=3W)

(1)

(2)

Ambient temperature Ta (˚C)

0.1

1

0.3

3

10

0.1

100

10

1

0.3

3

30

T

C=25˚C

170mJ

L-load (mH)

07

3

14

6

25

0

2

4

6

8

10

V

DS=25V

100˚C

T

C=150˚C

25˚C

0˚C

Gate to source voltage V

GS

(V)

0

25

50

75

100

125

150

0

1

2

3

4

5

6

V

DS=25V

I

D=1mA

Case temperature T

C

(˚C)

0

5

10

15

20

25

30

0

10

20

30

40

50

T

C=25˚C

I

D=26A

13A

6.5A

Gate to source voltage V

GS

(V)

02

4

6

8

101214

16

0

0.2

0.4

0.6

0.8

1.0

1.2

V

GS=10V

T

C=150˚C

100˚C

25˚C

0˚C

Drain current I

D

(A)

02

4

6

8

101214

16

0

2

4

6

8

10

12

14

16

V

DS=25V

T

C=25˚C

150˚C

T

C=0˚C

25˚C

100˚C

Drain current I

D

(A)

0

40

80

120

160

200

1

10

100

1000

10000

f=1MHz

T

C=25˚C

C

iss

C

oss

C

rss

Drain to source voltage V

DS

(V)

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