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2SK1104 Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor

Il numero della parte 2SK1104
Spiegazioni elettronici  Silicon N-Channel Junction FET
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Produttore elettronici  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SK1104 Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor

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1
Silicon Junction FETs (Small Signal)
unit: mm
2SK1104
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ164
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VGDS
ID
IG
PD
Tch
Tstg
Ratings
−65
20
10
300
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
s Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
IDSS*
IGSS
VGDS
VGSC
| Yfs |
RDS(on)
Ciss
Coss
Crss
Conditions
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −10µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 1mA, f = 1kHz
VDS = 10mV, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
min
0.2
−65
1.8
max
6
−10
−3.5
Unit
mA
nA
V
V
mS
pF
pF
pF
* I
DSS rank classification
typ
−1.5
2.5
250
7
1.3
1.5
Runk
IDSS (mA)
O
0.2 to 1
P
0.6 to 1.5
Q
1 to 3
R
2.5 to 6
1: Source
2: Gate
3: Drain
EIAJ: SC-72
New S Type Package
4.0±0.2
marking
2.54±0.15
1.27
1.27
123


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