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SI4496DY Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SI4496DY
Spiegazioni elettronici  R - C Thermal Model Parameters
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SI4496DY Scheda tecnica(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si4496DY_RC
Document Number: 74109
Revision 02-Sep-05
www.vishay.com
1
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient
Thermal
Impedance
curves
for
the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RT1
2.3490
N/A
250.9288 m
RT2
29.5589
N/A
6.7329
RT3
32.0670
N/A
9.1880
RT4
26.1202
N/A
1.7701
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CT1
1.1969 m
N/A
563.0696 µ
CT2
32.0544 m
N/A
13.6449 m
CT3
1.4071
N/A
174.2752 m
CT4
3.6901
N/A
4.8071 m


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