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SI7380DP Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7380DP Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 3 page SPICE Device Model Si7380DP Vishay Siliconix www.vishay.com Document Number: 70118 2 24-May-04 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.81 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 1652 A VGS = 10 V, ID = 29 A 0.0028 0.0027 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 25 A 0.0032 0.0032 Ω Forward Transconductance a gfs VDS = 6 V, ID = 29 A 110 110 S Diode Forward Voltage a VSD IS = 4.5 A, VGS = 0 V 0.75 0.68 V Dynamic b Total Gate Charge Qg 54 46 Gate-Source Charge Qgs 11.5 11.5 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 29 A 11.5 11.5 nC Turn-On Delay Time td(on) 32 20 Rise Time tr 19 15 Turn-Off Delay Time td(off) 185 220 Fall Time tf VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 61 85 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/µs 29 55 Ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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